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NTMFS4852N
Power MOSFET
30 V, 155 A, Single N ? Channel, SO ? 8FL
Features
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? These are Pb ? Free Devices
http://onsemi.com
Applications
? Refer to Application Note AND8195/D
? CPU Power Delivery
? DC ? DC Converters
? Low Side Switching
V (BR)DSS
30 V
R DS(ON) MAX
2.1 m W @ 10 V
3.3 m W @ 4.5 V
I D MAX
155 A
D (5,6)
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
V DSS
V GS
30
± 20
V
V
G (4)
S
4852N
S
AYWZZ
Continuous Drain
Current R q JA
(Note 1)
Power Dissipation
R q JA (Note 1)
Continuous Drain
Current R q JA v
10 sec
Power Dissipation
R q JA, t v 10 sec
Continuous Drain
Current R q JA
(Note 2)
Power Dissipation
R q JA (Note 2)
Continuous Drain
Current R q JC
(Note 1)
Steady
State
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T C = 25 ° C
T C = 85 ° C
I D
P D
I D
P D
I D
P D
I D
25
18
2.31
40
29
5.95
16
11
0.90
155
112
A
W
A
W
A
W
A
S (1,2,3)
N ? CHANNEL MOSFET
MARKING
DIAGRAM
D
1
SO ? 8 FLAT LEAD S
CASE 488AA G
STYLE 1 D
A = Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
D
D
Power Dissipation
R q JC (Note 1)
T C = 25 ° C
P D
86.2
W
Pulsed Drain
Current
t p =10 m s
T A = 25 ° C
I DM
310
A
ORDERING INFORMATION
Current limited by package T A = 25 ° C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain ? to ? Source Avalanche
Energy (V DD = 50 V, V GS = 10 V,
I L = 49 A pk , L = 0.3 mH, R G = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
I Dmaxpkg
T J ,
T STG
I S
dV/dt
EAS
T L
100
? 55 to
+150
72
6
360
260
A
° C
A
V/ns
mJ
° C
Device Package Shipping ?
NTMFS4852NT1G SO ? 8FL 1500 /
(Pb ? Free) Tape & Reel
NTMFS4852NT3G SO ? 8FL 5000 /
(Pb ? Free) Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
? Semiconductor Components Industries, LLC, 2012
May, 2012 ? Rev. 2
1
Publication Order Number:
NTMFS4852N/D
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